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K6E0808C1E-C Datasheet, Samsung semiconductor

K6E0808C1E-C Datasheet, Samsung semiconductor

K6E0808C1E-C

datasheet Download (Size : 181.62KB)

K6E0808C1E-C Datasheet

K6E0808C1E-C ram equivalent, 32k x 8 bit high-speed cmos static ram.

K6E0808C1E-C

datasheet Download (Size : 181.62KB)

K6E0808C1E-C Datasheet

Features and benefits


* Fast Access Time 10, 12, 15ns(Max.)
* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA.

Application

The K6E0808C1E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward. PIN CONFIGURATION(Top View) OE A11 A9 A8 A.

Description

The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle..

Image gallery

K6E0808C1E-C Page 1 K6E0808C1E-C Page 2 K6E0808C1E-C Page 3

TAGS

K6E0808C1E-C
32K
Bit
High-Speed
CMOS
Static
RAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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