* Fast Access Time 8,10ns(Max.)
* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4008V1D-08 : 80mA(Max.) K6R4008V1D-10 : 65mA(Max.)
* Single 3.3 ±0.3V Power Supply
* TTL Compatible Inputs and Outputs
* Fully Static Operation -
K6R4008V1D Datasheet (239.61 KB)
K6R4008V1D
Samsung semiconductor
239.61 KB
512kx8 bit high speed static ram(3.3v operating). operated at commercial and industrial temperature ranges..
PRELIMINARY K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. CMO.
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