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K7B403225B Datasheet, Samsung semiconductor

K7B403225B Datasheet, Samsung semiconductor

K7B403225B

datasheet Download (Size : 470.43KB)

K7B403225B Datasheet

K7B403225B sram equivalent, 128kx36/x32 & 256kx18 synchronous sram.

K7B403225B

datasheet Download (Size : 470.43KB)

K7B403225B Datasheet

Features and benefits


* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Contro.

Application

GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each b.

Description

The K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K(256K) words of 36(18) bits and integrat.

Image gallery

K7B403225B Page 1 K7B403225B Page 2 K7B403225B Page 3

TAGS

K7B403225B
128Kx36
x32
256Kx18
Synchronous
SRAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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