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K7B403625B - 128Kx36/x32 & 256Kx18 Synchronous SRAM

Download the K7B403625B datasheet PDF. This datasheet also covers the K7B variant, as both devices belong to the same 128kx36/x32 & 256kx18 synchronous sram family and are provided as variant models within a single manufacturer datasheet.

Description

The K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

  • Synchronous Operation.
  • 2 Stage Pipelined operation with 4 Burst.
  • On-Chip Address Counter.
  • Self-Timed Write Cycle.
  • On-Chip Address and Control Registers.
  • VDD= 3.3V+0.3V/-0.165V Power Supply.
  • VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
  • 5V Tolerant Inputs Except I/O Pins.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.
  • P.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K7B-4018.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K7B161835B 512Kx36 & 1Mx18 Synchronous SRAM Samsung Electronics
K7B163635B 512Kx36 & 1Mx18 Synchronous SRAM Samsung Electronics

Other Datasheets by Samsung Semiconductor

Part Number Description
K7B403625M 128Kx36-Bit Synchronous Burst SRAM
K7B403225B 128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B401825B 128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B161825A 512Kx36 & 1Mx18 Synchronous SRAM
K7B163625A 512Kx36 & 1Mx18 Synchronous SRAM

Full PDF Text Transcription

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K7A403600B K7A403200B K7A401800B Document Title 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330mA to 270mA at -15, from 300mA to 250mA at -14, ISB1 ; from 100mA to 80mA 1. Delete Pass-Through 1. Add x32 org. and industrial temperature 1. Final spec release 2. Changed Pin Capacitance - Cin ; from 5pF to 4pF - Cout ; from 7pF to 6pF Draft Date May. 15. 2001 June. 12. 2001 Remark Preliminary Preliminary 0.2 0.3 1.0 June.25. 2001 Aug. 11. 2001 Nov. 15. 2001 Preliminary Preliminary Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD.
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