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K7B403625B, K7B 128Kx36/x32 & 256Kx18 Synchronous SRAM

K7B403625B Description

K7A403600B K7A403200B K7A401800B Document Title 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst S.
The K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache o.

K7B403625B Features

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V+0.3V/-0.165V Power Supply.
* VDDQ Supply Voltage 3.3V+0.3V/-0.165V fo

K7B403625B Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

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This datasheet PDF includes multiple part numbers: K7B403625B, K7B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K7B403625B, K7B
Manufacturer
Samsung semiconductor
File Size
470.43 KB
Datasheet
K7B-4018.pdf
Description
128Kx36/x32 & 256Kx18 Synchronous SRAM
Note
This datasheet PDF includes multiple part numbers: K7B403625B, K7B.
Please refer to the document for exact specifications by model.

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128Kx36 x32 256Kx18 Synchronous SRAM Samsung semiconductor
Samsung semiconductor K7B403625B-like datasheet