K7B163625A 512Kx36 & 1Mx18 Synchronous SRAM

Samsung semiconductor

Description

K7B163625A K7B161825A Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev.No.0.0 0.1 .
The K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium a.

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Datasheet Specifications

Part number: K7B163625A
Manufacturer: Samsung semiconductor
File Size: 263.99 KB
Datasheet: K7B163625A_Samsungsemiconductor.pdf
Description: 512Kx36 & 1Mx18 Synchronous SRAM

Features

* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* 3.3V+0.165V/-0.165V Power Supply.
* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of W Ex and BW when G W is high. And with CS 1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the addr

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K7B163625A 512Kx36 1Mx18 Synchronous SRAM Samsung semiconductor

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