K7B163625A Datasheet, Sram, Samsung semiconductor

K7B163625A Features

• Sram
• Synchronous Operation.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• 3.3V+0.165V/-0.165V Powe

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Part number:

K7B163625A

Manufacturer:

Samsung semiconductor

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263.99kb

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📄 Datasheet

Description:

512kx36 & 1mx18 synchronous sram. The K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level c

K7B163625A Application

• Applications GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is pe

TAGS

K7B163625A

Samsung semiconductor

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