K7B163625A Datasheet - Samsung semiconductor

K7B163625A 512Kx36 & 1Mx18 Synchronous SRAM

The K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(1M) words of 36(32/18) bits and integrates address and control registers, a 2-bit burst address coun.

K7B163625A K7B161825A Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature . 2. Add 165FBGA package 1. Final spec release 1. Delete 119BGA package. 2. Correct the Ball Size of 165 FBGA. 1. Delete x32 Org. 2. Delete 165FBGA package. 3. Delelte the 6.5 ns speed bin. Draft Date Feb. 23. 2001 May. 10. 2001 Aug. 30. 2001 Remark Prelim.

K7B163625A Features

* Synchronous Operation.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

K7B163625A_Samsungsemiconductor.pdf