K7B323635C Datasheet - Samsung semiconductor

1Mx36 & 2Mx18 Synchronous SRAM

K7B323635C Features

* Synchronous Operation.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 2.5 or 3.3V +/- 5% Power Supply.

* 5V Tolerant Inputs Except I/O Pins.

* Byte Writable Function.

* Global Writ

K7B323635C General Description

The K7B323635C and K7B321835C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter a.

K7B323635C Datasheet (477.15 KB)

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Datasheet Details

Part number:

K7B323635C

Manufacturer:

Samsung semiconductor

File Size:

477.15 KB

Description:

1mx36 & 2mx18 synchronous sram.
K7B323635C K7B321835C 1Mx36 & 2Mx18 Synchronous SRAM 36Mb Sync. Burst SRAM Specification 100LQFP with Pb / Pb-Free (RoHS compliant) INFORMATION IN .

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K7B323635C 1Mx36 2Mx18 Synchronous SRAM Samsung semiconductor

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K7B323635C Features

K7B323635C General Description

Datasheet Details

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