K7B323635C, K7B321835C Datasheet - Samsung semiconductor

K7B323635C 1Mx36 & 2Mx18 Synchronous SRAM

The K7B323635C and K7B321835C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter a.

K7B323635C K7B321835C 1Mx36 & 2Mx18 Synchronous SRAM 36Mb Sync. Burst SRAM Specification 100LQFP with Pb / Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS.

K7B323635C Features

* Synchronous Operation.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 2.5 or 3.3V +/- 5% Power Supply.

* 5V Tolerant Inputs Except I/O Pins.

* Byte Writable Function.

* Global Writ

K7B321835C_Samsungsemiconductor.pdf

K7B323635C Datasheet Preview — This datasheet PDF includes multiple part numbers: K7B323635C, K7B321835C. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K7B323635C, K7B321835C

Manufacturer:

Samsung semiconductor

File Size:

477.15 KB

Description:

1mx36 & 2mx18 synchronous sram.

Note:

This datasheet PDF includes multiple part numbers: K7B323635C, K7B321835C.
Please refer to the document for exact specifications by model.

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K7B323635C K7B321835C 1Mx36 2Mx18 Synchronous SRAM Samsung semiconductor

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