K7B323635C Datasheet, Sram, Samsung semiconductor

K7B323635C Features

• Sram
• Synchronous Operation.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• VDD= 2.5 or 3.3V +/- 5%

PDF File Details

Part number:

K7B323635C

Manufacturer:

Samsung semiconductor

File Size:

477.15kb

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📄 Datasheet

Description:

1mx36 & 2mx18 synchronous sram. The K7B323635C and K7B321835C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level c

K7B323635C Application

• Applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governm

TAGS

K7B323635C

Samsung semiconductor

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