K7B401825B Datasheet - Samsung semiconductor

128Kx36/x32 & 256Kx18 Synchronous SRAM

K7B401825B Features

* Synchronous Operation.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

K7B401825B General Description

The K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(1M) words of 36(32/18) bits and integrates address and control registers, a 2-bit burst address coun.

K7B401825B Datasheet (263.99 KB)

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Datasheet Details

Part number:

K7B401825B

Manufacturer:

Samsung semiconductor

File Size:

263.99 KB

Description:

128kx36/x32 & 256kx18 synchronous sram.
K7B163625A K7B161825A Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 .

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K7B401825B 128Kx36 x32 256Kx18 Synchronous SRAM Samsung semiconductor

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K7B401825B Features

K7B401825B General Description

Datasheet Details

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