K7B161835B 512Kx36 & 1Mx18 Synchronous SRAM

Samsung Electronics

Description

K7B163635B K7B161835B www.DataSheet4U.com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync.SRAM Specification 100TQFP with Pb & Pb-Free (RoHS compl.
The K7B163635B and K7B161835B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium a.

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Datasheet Specifications

Part number: K7B161835B
Manufacturer: Samsung Electronics
File Size: 424.73 KB
Datasheet: K7B161835B_SamsungElectronics.pdf
Description: 512Kx36 & 1Mx18 Synchronous SRAM

Features

* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* 5V Tolerant Inputs Except I/O Pins.
* Byte Writable Function.
* Global Writ

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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K7B161835B 512Kx36 1Mx18 Synchronous SRAM Samsung Electronics

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