K7B321825M Datasheet - Samsung semiconductor

1Mx36 & 2Mx18 Synchronous SRAM

K7B321825M Features

* Synchronous Operation.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

K7B321825M General Description

The K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter a.

K7B321825M Datasheet (304.66 KB)

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Datasheet Details

Part number:

K7B321825M

Manufacturer:

Samsung semiconductor

File Size:

304.66 KB

Description:

1mx36 & 2mx18 synchronous sram.
K7B323625M K7B321825M Document Title 1Mx36 & 2Mx18 Synchronous SRAM 1Mx36 & 2Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 .

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K7B321825M 1Mx36 2Mx18 Synchronous SRAM Samsung semiconductor

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K7B321825M Features

K7B321825M General Description

Datasheet Details

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