K7B321825M Datasheet, Sram, Samsung semiconductor

K7B321825M Features

• Sram
• Synchronous Operation.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• 3.3V+0.165V/-0.165V Powe

PDF File Details

Part number:

K7B321825M

Manufacturer:

Samsung semiconductor

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304.66kb

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📄 Datasheet

Description:

1mx36 & 2mx18 synchronous sram. The K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level c

K7B321825M Application

• Applications G W, B W, LBO, ZZ. Write cycles are internally selftimed and synchronous. Full bus-width write is done by GW, and each byte write is p

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K7B321825M

Samsung semiconductor

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