K7B321835C 1Mx36 & 2Mx18 Synchronous SRAM

Samsung semiconductor

Description

K7B323635C K7B321835C 1Mx36 & 2Mx18 Synchronous SRAM 36Mb Sync.Burst SRAM Specification 100LQFP with Pb / Pb-Free (RoHS compliant) INFORMATION IN .
The K7B323635C and K7B321835C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium a.

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Datasheet Specifications

Part number: K7B321835C
Manufacturer: Samsung semiconductor
File Size: 477.15 KB
Datasheet: K7B321835C_Samsungsemiconductor.pdf
Description: 1Mx36 & 2Mx18 Synchronous SRAM

Features

* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* 5V Tolerant Inputs Except I/O Pins.
* Byte Writable Function.
* Global Writ

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. w

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K7B321835C 1Mx36 2Mx18 Synchronous SRAM Samsung semiconductor

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