K7B161835B_SamsungElectronics.pdf
Datasheet Details
Part number:
K7B163635B, K7B161835B
Manufacturer:
Samsung Electronics
File Size:
424.73 KB
Description:
512kx36 & 1mx18 synchronous sram.
Note:
This datasheet PDF includes multiple part numbers: K7B163635B, K7B161835B.
Please refer to the document for exact specifications by model.
K7B163635B, K7B161835B, 512Kx36 & 1Mx18 Synchronous SRAM
The K7B163635B and K7B161835B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
It is organized as 512K(1M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter
K7B163635B K7B161835B www.DataSheet4U.com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync.
SRAM Specification 100TQFP with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVID
K7B163635B Features
* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* 5V Tolerant Inputs Except I/O Pins.
* Byte Writable Function.
* Global Writ
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