K7B403225B Datasheet - Samsung semiconductor

K7B403225B 128Kx36/x32 & 256Kx18 Synchronous SRAM

The K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K(256K) words of 36(18) bits and integrates address and control registers, a 2-bit burst ad.

K7A403600B K7A403200B K7A401800B Document Title 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330mA to 270mA at -15, from 300mA to 250mA at -14, ISB1 ; from 100mA to 80mA 1. Delete Pass-Through 1. Add x32 org. and industrial temperature 1. Final spec release 2. Changed Pin Capacitance - Cin ; from 5pF to 4pF - Cout .

K7B403225B Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 3.3V+0.3V/-0.165V Power Supply.

* VDDQ Supply Voltage 3.3V+0.3V/-0.165V fo

K7B403225B Datasheet (470.43 KB)

K7B403225B Datasheet Preview — Preview of K7B403225B PDF

Datasheet Details

Part number:

K7B403225B

Manufacturer:

Samsung semiconductor

File Size:

470.43 KB

Description:

128kx36/x32 & 256kx18 synchronous sram.

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K7B403225B 128Kx36 x32 256Kx18 Synchronous SRAM Samsung semiconductor

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