K7B403625B Datasheet - Samsung semiconductor

128Kx36/x32 & 256Kx18 Synchronous SRAM

K7B403625B Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 3.3V+0.3V/-0.165V Power Supply.

* VDDQ Supply Voltage 3.3V+0.3V/-0.165V fo

K7B403625B General Description

The K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K(256K) words of 36(18) bits and integrates address and control registers, a 2-bit burst ad.

K7B403625B Datasheet (470.43 KB)

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Datasheet Details

Part number:

K7B403625B

Manufacturer:

Samsung semiconductor

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470.43 KB

Description:

128kx36/x32 & 256kx18 synchronous sram.
K7A403600B K7A403200B K7A401800B Document Title 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst S.

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K7B403625B 128Kx36 x32 256Kx18 Synchronous SRAM Samsung semiconductor

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K7B403625B Features

K7B403625B General Description

Datasheet Details

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