K7B403625B Datasheet, Sram, Samsung semiconductor

K7B403625B Features

• Sram
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and C

PDF File Details

Part number:

K7B403625B

Manufacturer:

Samsung semiconductor

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470.43kb

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📄 Datasheet

Description:

128kx36/x32 & 256kx18 synchronous sram. The K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance sec

K7B403625B Application

• Applications GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is pe

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K7B403625B

Samsung semiconductor

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