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K7B403625M Datasheet - Samsung semiconductor

K7B403625M 128Kx36-Bit Synchronous Burst SRAM

K7B403625M Document Title 128Kx36-Bit Synchronous Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. History Draft Date 0.0 Initial draft May. 15. 1997 0.1 Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA. Change ISB2 value from 10mA to 20mA. Feb. 11. 1998 0.2 Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2) Add Overshoot spec 4.6V((pulse width≤tCYC/2) Chan.

K7B403625M Datasheet (436.99 KB)

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Datasheet Details

Part number:

K7B403625M

Manufacturer:

Samsung semiconductor

File Size:

436.99 KB

Description:

128kx36-bit synchronous burst sram.

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K7B403625M 128Kx36-Bit Synchronous Burst SRAM Samsung semiconductor

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