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K7B401825B Datasheet, Samsung semiconductor

K7B401825B Datasheet, Samsung semiconductor

K7B401825B

datasheet Download (Size : 263.99KB)

K7B401825B Datasheet

K7B401825B sram

128kx36/x32 & 256kx18 synchronous sram.

K7B401825B

datasheet Download (Size : 263.99KB)

K7B401825B Datasheet

K7B401825B Features and benefits

K7B401825B Features and benefits


* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* 3.3V+0.165V/-0.165V Power Sup.

K7B401825B Application

K7B401825B Application

GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each b.

K7B401825B Description

K7B401825B Description

The K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(1M) words of 36(32/18) bits and integrates address.

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K7B401825B Page 1 K7B401825B Page 2 K7B401825B Page 3

TAGS

K7B401825B
128Kx36
x32
256Kx18
Synchronous
SRAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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