DS065008C2 Datasheet (Sanan) - SiC Schottky Barrier Diode

DS065008C2, SiC Schottky Barrier Diode

VRRM 650 V IF(135℃) 11 A QC 23 nC TO-220-2L PIN 1 PIN 2 CASE Marking DS065008C2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC

Datasheet SDS065J008C2 650V/8A SiC Schottky Barrier Diode Characteristic * Zero Reverse Recovery Current * Positive temperature coefficient * Temperature-independent performance * High-speed switching * Low switching loss * Low heat dissipation requirements Application * Switching power supply * Power factor correction * Motor drive，traction * Charging pile Device SDS065J008C2 Package TO-220-2L Product Descript