DS065010E2 Datasheet (Sanan) - SiC Schottky Barrier Diode

DS065010E2, SiC Schottky Barrier Diode

VRRM 650 V IF(135℃) 12 A QC 28 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS065010E2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 65

Datasheet SDS065J010E2 650V/10A SiC Schottky Barrier Diode Characteristic * Zero Reverse Recovery Current * Positive temperature coefficient * Temperature-independent performance * High-speed switching * Low switching loss * Low heat dissipation requirements Application * Switching power supply * Power factor correction * Motor drive，traction * Charging pile Device SDS065J010E2 Package TO-263-2L Product Descri