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Sanyo Electric Components Datasheet

2SB544 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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2SB544 pdf
Ordering number : EN0199
2SB544 / 2SD400
Preliminary
SANYO Semiconductors
DATA SHEET
2SB544 / 2SD400
PNP / NPN Epitaxial Planar Silicon Transistors
Low-Frequency Power Amplifier
Electronic Governor Applications
Specifications ( ) : 2SB544
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(--)20V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)50mA
VCE=(--)2V, IC=(--)1A
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)500mA, IB=(--)50mA
IC=(--)500mA, IB=(--)50mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
Ratings
(--)25
(--)25
(--)5
(--)1
(--)2
900
150
--55 to +150
Unit
V
V
V
A
A
mW
°C
°C
Ratings
min typ
60*
30
180
(25)15
(--0.15) 0.1
(--)0.85
(--)25
(--)25
(--)5
max
(--)1.0
(--)1.0
560*
(--0.7)0.3
(--)1.2
Unit
μA
μA
MHz
pF
V
V
V
V
V
* : The 2SB544 / 2SD400 is classified by hFE at 50mA as follows.
Rank
D
E
F
G
hFE 60 to 120 100 to 200 160 to 320 280 to 560
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71608 TI IM No.0199-1/4


Sanyo Electric Components Datasheet

2SB544 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

2SB544 pdf
Package Dimensions
unit : mm (typ)
7520-002
6.0 4.7
5.0
2SB544 / 2SD400
0.5
0.6
0.5 0.5
123
1.45 1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
IC -- VCE
--1.0
2SB544 --8mA
--7mA
--0.8
--0.6
--0.4
--6mA
--5mA
--4mA
--3mA
--2mA
--0.2
0
0
--1.2
--1.0
--1mA
IB=0mA
--1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE -- V IT04917
IC -- VBE
2SB544
VCE= --2V
--0.8
--0.6
--0.4
--0.2
0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE -- V IT04919
1.0
2SD400
IC -- VCE
6mA
0.8
0.6
0.4
5mA
4mA
3mA
2mA
1mA
0.2
0 IB=0mA
012345
Collector-to-Emitter Voltage, VCE -- V IT04918
IC -- VBE
1.2
2SD400
VCE=2V
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT04920
No.0199-2/4


Part Number 2SB544
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker Sanyo
Total Page 4 Pages
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