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2SB514 - PNP/NPN Triple Diffused Planar Silicon Transistors

Key Features

  • Especially suited for use in output stage of 10W AF Power amplifier.
  • Complementary pair with the 2SB514 and 2SD313. Package Dimensions unit:mm 2010C [2SB514/2SD330] ( ) : 2SB514 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Tj Storage Temperature Tstg Electrical.

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Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features · Especially suited for use in output stage of 10W AF Power amplifier. · Complementary pair with the 2SB514 and 2SD313.