2SC3645 transistors equivalent, pnp/npn epitaxial planar silicon transistors.
* Adoption of FBET process.
* High breakdown voltage (VCEO=160V).
* Excellent linearity of hFE and small Cob.
* Fast switching speed.
* Ultrasmall siz.
Features
* Adoption of FBET process.
* High breakdown voltage (VCEO=160V).
* Excellent linearity of hFE and.
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