2SC3646 transistors equivalent, pnp/npn epitaxial planar silicon transistors.
* Adoption of FBET, MBIT processes.
* High breakdown voltage and large current capacity.
* Fast switching time.
* Ultrasmall size making it easy to provid.
Features
* Adoption of FBET, MBIT processes.
* High breakdown voltage and large current capacity.
* Fast sw.
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