2SC3708 transistor equivalent, pnp/npn epitaxial planar silicon transistor.
* Adoption of FBET process.
* AF amp, AF power amp.
* High breakdown voltage : VCEO>80V
Package Dimensions
unit:mm 2003B
[2SA1450/2SC3708]
5.0 4.0 4.0
0.45 0.
Features
* Adoption of FBET process.
* AF amp, AF power amp.
* High breakdown voltage : VCEO>80V
Package D.
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