* High DC current gain.
* Large current capacity
* Wide ASO.
* On-chip Zener diode of 60±10V between collector and base.
* Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process.
* High inductive load handling capability. Spec
2SD1395
Sanyo Semicon Device
78.42 KB
Npn triple diffused planar silicon darlington transistor.
Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Suitable for use in .
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