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Sanyo Electric Components Datasheet

2SK4179GS Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA1498
2SK4179GS
SANYO Semiconductors
DATA SHEET
2SK4179GS
Features
Low ON-resistance.
Motor drive.
Avalanche resistance guarantee.
10V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=30V, L=50μH, IAV=48A
*2 L50μH, Single pulse
Tch
Tstg
EAS
IAV
Electrical Characteristics at Ta=25°C
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
75
±20
80
320
1.75
70
150
--55 to +150
100
48
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : K4179
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=75V, VGS=0V
VGS=±16V, VDS=0V
min
75
Ratings
typ
max
1
±10
Unit
V
μA
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
www.DataSheet4USi.ncptoeemncdifeicdatuiosne,sooufracnuysatonmdearllsShAalNl bYeOsSoelemlyicroenspdouncstoibrlCe ofo.,rLtthde.
use.
products
described
or
contained
herein
stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
61009QA MS IM TC-00001991 No. A1498-1/5


Sanyo Electric Components Datasheet

2SK4179GS Datasheet

N-Channel Silicon MOSFET

No Preview Available !

2SK4179GS
Continued from preceding page.
Parameter
Symbol
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, ID=1mA
VDS=10V, ID=40A
ID=40A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=30V, VGS=10V, ID=80A
VDS=30V, VGS=10V, ID=80A
VDS=30V, VGS=10V, ID=80A
IS=80A, VGS=0V
Package Dimensions
unit : mm (typ)
7530-001
10.2 3.6
4.5
1.3
min
2
Ratings
typ
35
10.5
5400
480
350
62
335
220
160
100
30
28
1.07
max
4
13.7
1.5
Unit
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
1.2
0.8
123
2.55 2.55
2.55 2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220(LS)
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=30V
ID=40A
RL=0.75Ω
D VOUT
www.DataSheet4U.com
P.G 50Ω
2SK4179GS
S
Avalanche Resistance Test Circuit
50Ω
L
10V
0V
50Ω
2SK4179GS
VDD
No. A1498-2/5


Part Number 2SK4179GS
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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2SK4179GS Datasheet PDF






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