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MMBT2907ACR-C Datasheet Preview

MMBT2907ACR-C Datasheet

PNP Transistor

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Elektronische Bauelemente
MMBT2907ACR-C
-600mA, -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Epitaxial Planar die construction
Complementary NPN Type Available MMBT2222ACR-C
Ideal for Medium Power Amplification and Switching
Qualified to AEC-Q101 Standards for High Reliability
APPLICATION
Gate Driving MOSFET and IGBT
DC-DC Converters
Charging Circuit
Power Switches
MARKING
2F
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
ORDER INFORMATION
Part Number
Type
MMBT2907ACR-C Lead (Pb)-free and Halogen-free
ESD RATING
Parameter
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
VESD
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 3.00
1.20 1.80
0.89
1.3
1.70
2.3
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.18
0.55 REF.
0.08 0.26
0.6 REF.
0.95 BSC.
Collector
3
1
Base
2
Emitter
Ratings
4000
400
Unit
V
V
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Power Dissipation
PD
Thermal Resistance from Junction-Ambient
RθJA
Thermal Resistance from Junction-Case
RθJC
Junction, Storage Temperature Range
TJ, TSTG
Ratings
-60
-60
-5
-600
-0.5
300
417
250
150, -55~150
Unit
V
V
V
mA
A
mW
°C/W
°C/W
°C
http://www.SeCoSGmbH.com/
02-Jun-2020 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

MMBT2907ACR-C Datasheet Preview

MMBT2907ACR-C Datasheet

PNP Transistor

No Preview Available !

Elektronische Bauelemente
MMBT2907ACR-C
-600mA, -60V
PNP Plastic Encapsulated Transistor
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Min.
Typ.
Collector-Base Breakdown Voltage
V(BR)CBO
-60
-
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
-
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
-
TA=25°C
-
-
Collector Cut-off Current
ICBO
TA=125°C
-
-
Collector Cut-off Current
ICEX
-
-
75
-
100
-
DC Current Gain
hFE
100
-
100
-
50
-
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
Base-Emitter Saturation Voltage
-
-
VBE(sat)
-
-
Transition Frequency
fT
-
200
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cobo
-
8
Cibo
-
30
Td
-
10
Tr
-
40
Ts
-
80
Tf
-
30
Max.
-
-
-
-10
-10
-50
-
-
-
300
-
-0.4
-1.6
-1.3
-2.6
-
-
-
-
-
-
-
Unit
V
V
V
nA
uA
nA
mV
V
MHz
pF
Test Conditions
IC= -10µA, IE=0
IC= -10mA, IB=0
IE= -10µA, IC=0
VCB= -50V, IE=0
VCB= -50V, IE=0
VCE= -30V, VBE(OFF)= -0.5V
VCE= -10V, IC= -100uA
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -150mA
VCE= -10V, IC= -500mA
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
VCE= -20V, IC= -50mA,
f=100MHz
VCB= -10V, f=100kHz, IE=0
VEB= -2V, f=100kHz,IC=0
VCE= -30V, IC= -150mA,
IB1= -15mA
nS
VCE= -6V, IC= -150mA
IB1= -IB2= -15mA
http://www.SeCoSGmbH.com/
02-Jun-2020 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4



Part Number MMBT2907ACR-C
Description PNP Transistor
Maker SeCoS
Total Page 3 Pages
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