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MMBT2907FW - PNP Silicon General Purpose Transistor

Key Features

  • Epitaxial Planar Die Construction.
  • Complementary NPN Type Available(MMBT2222FW).
  • Ideal for Medium Power Amplification and Switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente MMBT2907FW PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Epitaxial Planar Die Construction  Complementary NPN Type Available(MMBT2222FW)  Ideal for Medium Power Amplification and Switching MARKING CODE  MMBT2907FW = 2F  Base Collector  MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)  Emitter SOT-523 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 1.50 1.70 1.45 1.75 0.75 0.85 0.70 0.90 0.90 1.10 0.25 0.33 REF. G H J K L Millimeter Min. Max. 0.00 0.15 0.28 0.40 0.10 0.20 -0.75 0.