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Elektronische Bauelemente
MMBT2907A
PNP Silicon
General Purpose Transistor
FEATURES
· Epitaxial Planar Die Construction · Complementary NPN Type Available
(MMBT2222A)
· Ideal for Medium Power Amplification and
Switching
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
COLLECTOR 3
1 BASE
2 EMITTER
V
A L
3
Top View
12
G
BS C
3
1 2
D
H K
J
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1)
TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DE
MMBT2907A Datasheet
