The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Elektronische Bauelemente
* Features
MMBT2907Q
PNP Silicon General Purpose Transistor
RoHS Compliant Product
D
SOT-89
D1 A
E1 L
E
b1
Power dissipation PCM : 1.25 W (Temp.= 25 OC)
Collector current ICM : -0.6 A
Collector-base voltage V(BR)CBO : -60 V
Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150OC
1 2 3
1.BAS E 2.COLLE CTOR 3.E MITTE R
b e
e1
Symbol
A b b1 c D D1 E E1 e e1 L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
Electrical Characteristics( Tamb=25OC unless otherwise specified)
C
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.
MMBT2907Q Datasheet
