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SMG2302 Datasheet Preview

SMG2302 Datasheet

N-Channel MosFET

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Elektronische Bauelemente
SMG2302
3.2A, 20V,RDS(ON) 85m
N-Channel Enhancement Mode Power Mos.FET
Description
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
The SMG2302 provide the designer with the best
Combination of fast switching, low on-resistance
and cost-effectiveness.
Features
* Capable of 2.5V gate drive
* Small package outline
3
S Top View
21
B
D
G
C
H
Drain
Gate
Source
J
K
D
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.15
S 2.40 2.80
All Dimension in mm
Marking : 2302
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current, VGS@4.5V
Continuous Drain Current,3 VGS@4.5V
Pulsed Drain Current 1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
G
Symbol
VDS
VGS
ID@TA=25 oC
ID@TA=70 oC
IDM
PD@TA=25 oC
Tj, Tstg
S
Ratings
20
±12
3.2
2.6
10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Symbol
Rthj-a
Ratings
90
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4




SeCoS

SMG2302 Datasheet Preview

SMG2302 Datasheet

N-Channel MosFET

No Preview Available !

Elektronische Bauelemente
SMG2302
3.2A, 20V,RDS(ON) 85m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
IGSS
IDSS
Static Drain-Source On-Resistance2
RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
20
_
0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.1
_
_
_
_
_
_
4.4
0.6
1.9
5.2
37
15
5.7
145
100
50
6
Max.
_
_
1.2
±100
1
10
85
115
_
_
_
_
_
_
_
_
_
_
_
Unit
V
V/ oC
Test Condition
VGS=0V, ID=250uA
Reference to 25oC ,ID=1mA
V VDS=VGS, ID=250uA
nA VGS=±12V
uA VDS=20V,VGS=0
uA VDS=20V,VGS=0
VGS=4.5V, ID=3.6A
m
VGS=2.5V, ID=3.1A
ID=3.6A
nC VDS=10V
VGS=4.5V
VDD=10V
ID=3.6A
nS VGS=5V
RG=6
RD=2.8
VGS=0V
pF VDS=10V
f=1.0MHz
S VDS=5V, ID=3.6A
Source-Drain Diode
Parameter
Forward On Voltage 2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Symbol
VSD
Is
ISM
Min.
_
_
_
Typ.
_
_
_
Max.
1.2
1
10
Unit
V
A
A
Test Condition
IS=1.6A, VGS=0V.
VD=VG=0V, VS=1.2V
G
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4


Part Number SMG2302
Description N-Channel MosFET
Maker SeCoS
Total Page 4 Pages
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