Full PDF Text Transcription for HCD7N70S (Reference)
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HCD7N70S. For precise diagrams, and layout, please refer to the original PDF.
HCD7N70S HCD7N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low ...
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Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.95 ȍ 7S #9GS=10V 100% Avalanche Tested June 2015 BVDSS = 700 V RDS(on) typ ȍ ID = 5.0 A D-PAK 2 1 3 1.Gate 2. Drain 3.
HCD7N70S Datasheet
