Full PDF Text Transcription for HCP70R600S (Reference)
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HCP70R600S. For precise diagrams, and layout, please refer to the original PDF.
HCP70R600S HCP70R600S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very ...
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ior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested November 2014 BVDSS = 700 V RDS(on) typ ȍ ID = 7.3 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Static AC (f>
HCP70R600S Datasheet
