Full PDF Text Transcription for HCS50R150V (Reference)
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HCS50R150V. For precise diagrams, and layout, please refer to the original PDF.
HCS50R150V July 2014 HCS50R150V 500V N-Channel Super Junction MOSFET BVDSS = 500 V RDS(on) typ = 0.13 ȍ ID = 22 A FEATURES Originative New Design Superior Avalanche R...
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3 ȍ ID = 22 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.15 ȍ(Typ.) @VGS=10V 100% Avalanche Tested RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3.
HCS50R150V Datasheet
