HFP11N40 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP11N40 HFP11N40 400V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.38 Ω (Typ. ) @VGS=10V Dec 2005 BVDSS = 400 V RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dra.