HFP11N80Z Datasheet 800V N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP11N80Z_HFS11N80Z Oct 2016 HFP11N80Z / HFS11N80Z 800V N-Channel.

Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 11 0.78 74 HFP11N80Z TO-220 HFS11N80Z TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source.