HFU3N80 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFD3N80/HFU3N80 Dec 2005 HFD3N80/HFU3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 4.0 Ω ID = 2.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD3N80 1 2 3 HFU3N80 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-.