HFU4N50 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFD4N50_HFU4N50 July 2005 HFD4N50 / HFU4N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 2.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD4N50 1 2 3 HFU4N50 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-.