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HRLE550P03K Datasheet Preview

HRLE550P03K Datasheet

P-Channel MOSFET

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HRLE550P03K
-30V P-Channel MOSFET
FEATURES
‰ Super High Dense Cell Design
‰ Reliable and Rugged
‰ Lower RDS(ON) : 55 (Max.) @VGS=-10V
‰ Lower RDS(ON) : 65 (Max.) @VGS=-4.5V
‰ Lower RDS(ON) : 100 (Max.) @VGS=-2.5V
‰ 100% Avalanche Tested
Feb 2015
BVDSS = - 30 V
RDS(on)max = 55
ID = - 4 A
SOT-23
D
S
G
Absolute Maximum Ratings TA=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TA = 25
TA = 70
Power Dissipation
TA = 25
TA = 100
Operating and Storage Temperature Range
-30
ρ12
-4
-3.1
-12
1.4
0.6
-55 to +150
Units
V
V
A
A
A
W
W
Thermal Resistance Characteristics
Symbol
Parameter
RșJA Junction-to-Ambient
Typ.
--
Max.
95
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͦ͑͢͡




SemiHow

HRLE550P03K Datasheet Preview

HRLE550P03K Datasheet

P-Channel MOSFET

No Preview Available !

Electrical Characteristics TA=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON)1 On-Resistance
VDS = VGS, ID = -250
VGS = -10 V, ID = -4 A
VGS = -4.5 V, ID = -3 A
VGS = -2.5 V, ID = -2 A
-1.0
--
--
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = -250
VDS = -24 V, VGS = 0 V
VDS = -24 V, TJ = 70
VGS = ρ12 V, VDS = 0 V
-30
--
--
--
Dynamic Characteristics 2
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
Switching Characteristics 2
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = -15 V, ID = -1 A,
RG = 6 Ÿ
VDS = -15 V, ID = -4 A,
VGS = -10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
VSD1
trr
Qrr
Continuous Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS = -1 A, VGS = 0 V
IS = -4 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
Notes ;
1. Pulse test : pulse width ”300ns, duty cycle ”2%
2. Guaranteed by design, not subject to production testing
-- -2.5 V
45 55 mŸ
57 65 mŸ
80 100 mŸ
-- -- V
-- -1
-- -10
-- ρ100 nA
885 --
75 --
65 --
6 --
Ÿ
5.5 --
12 --
58 --
28 --
18 -- nC
1.5 -- nC
2.9 -- nC
-1 --
A
-- -1.1 V
13 --
7 -- nC
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͦ͑͢͡


Part Number HRLE550P03K
Description P-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
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