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BCP71 Datasheet

NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)

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NPN Silicon AF Power Transistor
Preliminary data
Drain switch for RF power amplifier stages
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
BCP 71M
4
5
3
2
1
VPW05980
Type
BCP 71M
Marking Ordering Code Pin Configuration
Package
PCs Q62702-C2597 1 = E 2 = C 3 = E 4 = B 5 = C SCT-595
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS 94 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJA
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Value
32
32
5
3
6
200
500
1.7
150
-65...+150
88
33
Unit
V
A
mA
W
°C
K/W
SSeemmicicoonndduucctotor rGGrorouupp
11
Au 1-19928-1-1919-081



Siemens Electronic Components Datasheet

BCP71 Datasheet

NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)

No Preview Available !

BCP 71M
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 32
-
-V
Collector-base breakdown voltage
IC = 100 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 8 V, IE = 0
Collector cutoff current
VCB = 8 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 2 A, VCE = 2 V
V(BR)CBO 32
V(BR)EBO 5
ICBO
-
ICBO
-
IEBO
-
hFE
25
85
50
--
--
- 100 nA
- 20 µA
- 100 nA
-
--
- 475
--
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
VCEsat
- 0.18 - V
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
VBEsat - - 1.2 V
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 100 - MHz
Ccb - 80 - pF
1) Pulse test: t < 300µs; D < 2%
SSeemmicicoonndduucctotor rGGrorouupp
22
Au 1-19928-1-1919-081


Part Number BCP71
Description NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)
Maker Siemens Semiconductor Group
Total Page 4 Pages
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