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BF543 - Silicon N Channel MOS FET Triode

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Silicon N Channel MOS FET Triode Preliminary Data q q BF 543 For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BF 543 Marking LDs Ordering Code (tape and reel) Q62702-F1372 Pin Configuration 1 2 3 G D S Package1) SOT-23 Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA ≤ 60 ˚C Storage temperature range Channel temperature Ambient temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VDS ID ± IGSM Values 20 30 10 200 150 – 55 … + 150 Unit V mA mW Ptot Tstg Tch TA – 55 … + 150 ˚C 450 K/W 1) 2) For detailed information see chapter Package Outlines.
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