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Q62702-C2279 Datasheet - Siemens Semiconductor Group

NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Q62702-C2279 Features

* q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type BC 846 AW BC 846 BW BC 847 AW BC 847 BW BC 847 CW BC 848 AW BC 848 BW B

Q62702-C2279 General Description

Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth J.

Q62702-C2279 Datasheet (272.32 KB)

Preview of Q62702-C2279 PDF

Datasheet Details

Part number:

Q62702-C2279

Manufacturer:

Siemens Semiconductor Group

File Size:

272.32 KB

Description:

Npn silicon af transistor (for af input stages and driver applications high current gain low collector-emitter saturation voltage).

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TAGS

Q62702-C2279 NPN Silicon Transistor For input stages and driver applications High current gain Low collector-emitter saturation voltage Siemens Semiconductor Group

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