Datasheet Details
| Part number | STN4826 |
|---|---|
| Manufacturer | Stanson |
| File Size | 673.36 KB |
| Description | Dual N-Channel Enhancement Mode MOSFET |
| Datasheet |
 STN4826 Datasheet
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| Part number | STN4826 |
|---|---|
| Manufacturer | Stanson |
| File Size | 673.36 KB |
| Description | Dual N-Channel Enhancement Mode MOSFET |
| Datasheet |
STN4826 Datasheet
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The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A.
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