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VP01A - P-Channel Enhancement-Mode Vertical DMOS Power FETs

Datasheet Summary

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VP01A
Manufacturer Supertex
File Size 244.40 KB
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
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" !iupertexinc. VP01A P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVoos -40V -60V -90V ROS(ON) (max) 8n 8n 8n jOlON) (min) -O.SA -O.SA -O.
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