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VP01A Datasheet Preview

VP01A Datasheet

P-Channel Enhancement-Mode Vertical DMOS Power FETs

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" !iupertexinc.
VP01A
P-Channel Enhancement-Mode
Vertical DMOS Power FETs
Ordering Information
BVoss I
BVoos
-40V
-60V
-90V
ROS(ON)
(max)
8n
8n
8n
jOlON)
(min)
-O.SA
-O.SA
-O.SA
TO-39
TO-52
VP0104N2 VP0104N9
VP0106N2 VP0106N9
VP0109N2 VP0109N9
Order Number I Package
TO-92
TO-220
Quad P-DIP Quad C-DIP
DICE
VP0104N3 VP0104NS VP0104N6 VP0104N7 VP0104ND
VP0106N3 VP0106NS VP0106N6 VP0106N7 VP0106ND
VP0109N3 VP0109NS
-
- VP0109ND
Features
o Freedom from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low C1SS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down VOltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
_I
Applications
o Motor control
o Convertors
o Amplifiers
o Switches
o Power supply circuits
o Driver (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Package Options
i TO-220
TO-92
(Notes 1 and 2)
if
TO-39
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature·
*Oistance of 1.6 mm from case for 10 seconds.
±20V
9-S
14·Lead DIP
Nole I : See Package Outline section for discrete pinouts.
Note 2: See Array section for quad pinouts.




Supertex

VP01A Datasheet Preview

VP01A Datasheet

P-Channel Enhancement-Mode Vertical DMOS Power FETs

No Preview Available !

Thermal Characteristics
Package
ID (continuous)·
ID (pulsed)·
Power Dissipation
@Tc=25°C
TO-39
TO-52
TO-92
TO-220
Plastic Dip
Ceramic Dip
-0.45A
-0.25A
-0.25A
-1.0A
-1.0A
-1.0A
-0.8A
-1.0A
3.5W
1.0W
1.0W
15.0W
Refer to Arrays & Special Functions Section.
• 10 (continuous) is limited by max rated Tj"
818
°CIW
125
170
170
70
81D
°CIW
35
125
125
8.3
IDA
-0.5A
-O.4A
-O.4A
-1.0A
VP01A
IDRM•
-1.0A
-1.0A
-0.8A
-1.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
(Notes 1 and 2)
Symbol
BVoss
VGSlh
e"v GS(th)
IGSS
loss
Parameter
Drain-to-Source
Breakdown Voltage
VP0109
VP0106
Gate Threshold Voltage
VP0104
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min Typ Max Unit
-90
-60 V
-40
-1.5 -3.5 V
-5.8 -6.5 mV/oC
-1.0 -100
nA
-10 flA
-1 mA
10(ON)
ON-State Drain Current
-0.15 -0.25
-0.50 -1.0
A
ROS(ON)
Static Drain-to-Source
ON-State Resistance
11 15
5 80
aROS(ON) Change in ROS(ON) with Temperature
0.55 1.0 %IOC
GFS Forward Transconductance
150 200
ma
CISS Input Capacitance
45 60
Coss
CRSS
Common Source Output Capacitance
Reverse Transfer Capacitance
22 30 pF
38
td{ON)
tr
td(OFF)
~
Vso
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
46
7 10
35
46
-1.2 -2.0
ns
V
trr Reverse Recovery Time
400 ns
Note 1: All D.C. parameters 100% tested at 25'C unless otherwise stated. (Pulse test: 300~s pulse. 2% duty cycle.)
Note 2: All A.C. parameters sample tested.
Conditions
10= -1.0mA, VGS ~ 0
VGS = Vos' 10 = -1.0mA
10 = -1.0mA, VGS = Vos
VGS = ±20V, Vos = 0
VGS = 0, Vos = Max Rating
VGS = 0, Vos = 0.8 Max Rating
TA = 125°C
VGS = -5V, Vos = -25V
VGs =-10V, Vos =-25V
VGS = -5V, 10 = -O.IA
VGS = -10V, 10 = -0.5A
10 = -0.5A, VGS = -10V
Vos = -25V, 10 = -0.5A
VGS = 0, Vos = -25V
f= 1 MHz
Voo= -25V
10=-1A
Rs = 500
Iso = -2.5A, VGS = 0
Iso = -1A, VGS = 0
Switching Waveforms and Test Circuit
Input 10%
t(ON)
Output _ _ _ _---I
10%
t(OFF)
iI----PU~E---I
GENERATOR
I
f---<~~::)SCOPE
I
V-~~--r1~
D.U.T.
I
I
I
I
I
i ' "~---- ______II
9-6


Part Number VP01A
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
Maker Supertex
Total Page 4 Pages
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