2N7000 mosfet equivalent, n-channel mosfet.
* High density cell design for low RDS(ON)
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability
* RoHS.
2N7000
VDSS
Drain-Source Voltage
60
VDGR
Drain-Gate Voltage (RGS≤1MΩ)
60
VGSS
ID IDP
Gate-Source Voltage Drain Current
Continuous Non Repetitive (tp<50µs) Continuous
Pulsed
±20 ±40 200 500
PD Drain Power Dissipation
400
TJ Junction Temp.
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