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2N7000 - N-Channel MOSFET

Description

2N7000 VDSS Drain-Source Voltage 60 VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repetitive (tp

Features

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.
  • RoHS compliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol.

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Datasheet Details

Part number 2N7000
Manufacturer TAITRON
File Size 300.46 KB
Description N-Channel MOSFET
Datasheet download datasheet 2N7000 Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • RoHS compliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.
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