2N7002KDWS Datasheet Double N-Channel MOSFET

Manufacturer: TAITRON

Overview: Enhancement Mode MOSFET (Double N-Channel) 2N7002KDWS Enhancement Mode MOSFET (Double.

2N7002KDWS double n-channel mosfet by TAITRON - Datasheet Preview

Datasheet Details

Part number	2N7002KDWS
Manufacturer	TAITRON
File Size	400.80 KB
Description	Double N-Channel MOSFET
Download	2N7002KDWS Download (PDF)

General Description

2N7002KDWS VDSS VGSS ID IDP PD TJ TSTG ESD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed Drain Power Dissipation Junction Temperature Storage Temperature Range Gate-Source ESD Rating TA=25°C TA=75°C 60 ±20 115 800 200 120 +150 -55 to +150 2000 Unit V V mA mA mW mW °C °C V TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev.

A/CW Page 1 of 8 Enhancement Mode MOSFET (Double N-Channel) Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics 2N7002KDWS Symbol V(BR)DSS IDSS IGSS Description Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current On Characteristics (Note3) Min.

60 - Typ.

Key Features

Advanced Trench Process Technology.
High density cell design for low RDS(ON).
Very low leakage current in off condition.
ESD Protected 2000V HBM.
RoHS Compliance SOT-363 Mechanical Data Case: Terminals: Weight: SOT-363, Plastic Package Solderable per MIL-STD-750, Method 2026 0.006 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol.

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