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FDN8601 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Primary DC-DC Switch Load Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Sym

Key Features

  • Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A.
  • Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability in a widely used surface mount package.
  • Fast switching speed.
  • 100% UIL tested.
  • RoHS Compliant General.

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Datasheet Details

Part number FDN8601
Manufacturer TY Semiconductor
File Size 510.09 KB
Description N-Channel MOSFET
Datasheet download datasheet FDN8601 Datasheet

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Full PDF Text Transcription (Reference)

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SMD Type Product specification FDN8601 100 V, 2.7 A, 109 m: Features „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A „ Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.