FDN8601 - N-Channel MOSFET

TY Semiconductor

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Datasheet Details

Part number	FDN8601
Manufacturer	TY Semiconductor
File Size	510.09 KB
Description	N-Channel MOSFET
Datasheet	FDN8601-TYSemiconductor.pdf

FDN8601 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Primary DC-DC Switch Load Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junc

Features

Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A.
Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
Fast switching speed.
100% UIL tested.
RoHS Compliant General.

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Published: Aug 5, 2014 |