n-channel mosfet.
3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6 * 2.
Standard Product WNM2027 is Pb-free.
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Features
3 z z z z z Trench Technology Supper high dens.
The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
(ON)
D 3
with low gate 1 G 2 S
charge. This device is suitable for use in DC-DC conversion and power switch appl.
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