WNM4006 - N-Channel MOSFET
The WNM4006 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM4006 is Pb-free.
1 G 2 S Pin
WNM4006 Features
* z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 W46
* = Device Code = Month (A~Z) W46
* Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit D
