WNM4006 Datasheet - TY Semiconductor

WNM4006 N-Channel MOSFET

The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4006 is Pb-free. 1 G 2 S Pin.

WNM4006 Features

* z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 W46

* = Device Code = Month (A~Z) W46

* Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit D

WNM4006 Datasheet (96.26 KB)