Datasheet4U Logo Datasheet4U.com

WNM01N11

MOSFET

WNM01N11 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Small package SOT-23-6L Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch

* Load Switch

* Charging   1N11 = D

WNM01N11 General Description

The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM01N11 is Pb-free and Halogen-.

WNM01N11 Datasheet (1.18 MB)

Preview of WNM01N11 PDF

Datasheet Details

Part number:

WNM01N11

Manufacturer:

WillSEMI

File Size:

1.18 MB

Description:

Mosfet.
WNM01N11 Single N-Channel, 110V, 1.8A, Power MOSFET VDS (V) 110 Typical Rds(on) (Ω) 0.230@ VGS=10V 0.250@ VGS=4.5V WNM01N11 Http://www.sh-willsemi.

📁 Related Datasheet

WNM01N10 MOSFET (WillSEMI)

WNM05N60 MOSFET (WillSEMI)

WNM05N60F MOSFET (WillSEMI)

WNM07N60 N-Channel MOSFET (Will Semiconductor)

WNM07N60F N-Channel MOSFET (Will Semiconductor)

WNM07N65 N-Channel MOSFET (Will Semiconductor)

WNM07N65F N-Channel MOSFET (Will Semiconductor)

WNM12N65 N-Channel MOSFET (Will Semiconductor)

WNM12N65F N-Channel MOSFET (Will Semiconductor)

WNM2016 N-Channel MOSFET (Will Semiconductor)

TAGS

WNM01N11 MOSFET WillSEMI

Image Gallery

WNM01N11 Datasheet Preview Page 2 WNM01N11 Datasheet Preview Page 3

WNM01N11 Distributor