WNM12N65 Datasheet, Mosfet, Will Semiconductor

WNM12N65 Features

• Mosfet
• 650V@TJ=25°C
• Typ.RDS(on)=0.57Ω
• Low gate charge
• 100% avalanche tested
• 100% Rg tested D GDS TOT-O22- 0 12N65 12N65F G S GD S TO-2

PDF File Details

Part number:

WNM12N65

Manufacturer:

Will Semiconductor

File Size:

1.01MB

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📄 Datasheet

Description:

N-channel mosfet. The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to

WNM12N65 Application

• Applications power switching application and a wide variety of other applications. WNM12N65/WNM12N65F Features
• 650V@TJ=25°C
• Ty

TAGS

WNM12N65

Will Semiconductor

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