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WNM07N60F, WNM07N60 Datasheet - Will Semiconductor

WNM07N60F N-Channel MOSFET

The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other.

WNM07N60F Features

* 600V@TJ=25°C

* Typ.RDS(on)=1.0 Ω

* Low gate charge

* 100% avalanche tested

* 100% Rg tested D GDS TOT-O22- 0 G S GD S TO-220F WNM07N60 =Devices code Y Y =Year WW =Week WNM07N60F =Devices code Y Y =Year WW =Week Order Information Device Package WNM07N60_3/T TO-220

WNM07N60-WillSemiconductor.pdf

This datasheet PDF includes multiple part numbers: WNM07N60F, WNM07N60. Please refer to the document for exact specifications by model.
WNM07N60F Datasheet Preview Page 2 WNM07N60F Datasheet Preview Page 3

Datasheet Details

Part number:

WNM07N60F, WNM07N60

Manufacturer:

Will Semiconductor

File Size:

1.70 MB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: WNM07N60F, WNM07N60.
Please refer to the document for exact specifications by model.

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TAGS

WNM07N60F WNM07N60 N-Channel MOSFET Will Semiconductor

WNM07N60F Distributor